INCHANGE Semiconductor
isc Silicon
NPN Power
Transistor
isc Product Specification
KSD288
DESCRIPTION ·Collector-Base Breakdown Voltage-
: V(BR)CBO= 80V(Min) ·Collector Current- IC= 3A ·Collector Power Dissipation-
: PC= 25W@ TC= 25℃
APPLICATIONS ·Power
regulator ·Low frequency high power amplifier
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
80 V
VCEO
Collector-Emitter Voltage
55 V
VEBO
Emitter-Base Voltage
5V
IC Collector Current-Continuous
PC
Collector Power Dissipation @ TC=25℃
TJ Junction Temperature
3A 25 W 150 ℃
Tstg Storage Temperature Range
-55~150
℃
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INCHANGE Semiconductor
isc Silicon ...