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KSD2012

Fairchild Semiconductor
Part Number KSD2012
Manufacturer Fairchild Semiconductor
Description Low Frequency Power Amplifier
Published Apr 5, 2005
Detailed Description KSD2012 KSD2012 Low Frequency Power Amplifier • Complement to KSB1366 1 TO-220F 2.Collector 3.Emitter 1.Base NPN Ep...
Datasheet PDF File KSD2012 PDF File

KSD2012
KSD2012

Overview
KSD2012 KSD2012 Low Frequency Power Amplifier • Complement to KSB1366 1 TO-220F 2.
Collector 3.
Emitter 1.
Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC IB PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation (TC=25°C) Junction Temperature Storage Temperature Value 60 60 7 3 0.
3 25 150 - 55 ~ 150 Units V V V A A W °C °C Electrical Characteristics TC=25°C unless otherwise noted Symbol BVCEO ICBO IEBO h FE1 hFE2 VCE(sat) VBE(on) fT Parameter Collector-Emitter Breakdown Voltage Collector Cut-off Current Emitter Cut-off Curre...


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