INCHANGE Semiconductor
isc Silicon
NPN RF
Transistor
isc RF Product Specification
MMBR911L
DESCRIPTION ·High Gain
GNF = 17 dB TYP.
@ IC= 10 mA, f = 500 MHz ·Low Noise Figure
NF= 1.
7dB TYP.
@ f= 500 MHz ·High Current-Gain Bandwidth Product
fT = 6.
0 GHz TYP.
@ IC= 30 mA
APPLICATIONS ·Designed for low noise, wide dynamic range front-end
amplifiers and low-noise VCO’S.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
20 V
VCEO Collector-Emitter Voltage
12 V
VEBO
Emitter-Base Voltage
IC Collector Current-Continuous
PC
Collector Power Dissipation @TC= 75℃
TJ Junction Temperature
Tstg Storage Temperature Range
2V
60 mA
0.
333
W
150 ℃
-5...