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MMBR911LT1

Motorola
Part Number MMBR911LT1
Manufacturer Motorola
Description NPN Silicon High-Frequency Transistor
Published May 9, 2005
Detailed Description MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMBR911LT1/D The RF Line NPN Silicon High-Frequency Tra...
Datasheet PDF File MMBR911LT1 PDF File

MMBR911LT1
MMBR911LT1

Overview
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMBR911LT1/D The RF Line NPN Silicon High-Frequency Transistor Designed for low noise, wide dynamic range front–end amplifiers and low–noise VCO’s.
Available in a surface–mountable plastic package.
This Motorola small–signal plastic transistor offers superior quality and performance at low cost.
• High Gain–Bandwidth Product fT = 7.
0 GHz (Typ) @ 30 mA • Low Noise Figure NF = 1.
7 dB (Typ) @ 500 MHz • High Gain GNF = 17 dB (Typ) @ 10 mA/500 MHz • State–of–the–Art Technology Fine Line Geometry Ion–Implanted Arsenic Emitters Gold Top Metallization and Wires Silicon Nitride Passivation • Available in tape and reel packaging options: T1 suffix = 3,000 units per reel MMBR911LT1 IC = 60 mA LOW NOISE HIGH–FREQUENCY TRANSISTOR NPN SILICON CASE 318–08, STYLE 6 SOT–23 LOW PROFILE MAXIMUM RATINGS Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current — Continuous Power Dissipation @ Tcase = 75°C (1) Derate linearly above Tcase = 75°C Storage Temperature Maximum Junction Temperature Symbol VCEO VCBO VEBO IC PD(max) Tstg TJmax Value 12 20 2.
0 60 333 4.
44 – 55 to +150 150 Unit Vdc Vdc Vdc mA mW mW/°C °C °C THERMAL CHARACTERISTICS Rating Thermal Resistance, Junction to Case Symbol RθJC Value 225 Unit °C/W DEVICE MARKING MMBR911LT1 = 7P NOTE: 1.
Case temperature measured on collector lead immediately adjacent to body of package.
REV 8 RF DEVICE DATA ©MOTOROLA Motorola, Inc.
1997 MMBR911LT1 1 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (IC = 1.
0 mA, IB = 0) Collector–Base Breakdown Voltage (IC = 0.
1 mA, IE = 0) Emitter–Base Breakdown Voltage (IE = 0.
1 mA, IC = 0) Collector Cutoff Current (VCB = 15 Vdc, IE = 0) V(BR)CEO V(BR)CBO V(BR)EBO ICBO 12 20 2.
0 — — — — — — — — 50 Vdc Vdc Vdc nAdc ON CHARACTERISTICS DC Current Gain (IC = 30 mAdc, VCE = 10 Vdc) hFE 30 — 2...


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