INCHANGE Semiconductor
isc Silicon
NPN RF
Transistor
isc RF Product Specification
MMBR920L
DESCRIPTION ·Low Noise
NF= 2.
4dB TYP.
@ f= 500MHz ·High Gain
Gpe= 15dB TYP.
@ f= 500MHz
APPLICATIONS ·Designed for thick and thin-film circuits using surface mount
components and requiring low-noise , high-gain signal amplification at frequencies to 1 GHz.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
20 V
VCEO Collector-Emitter Voltage
15 V
VEBO
Emitter-Base Voltage
IC Collector Current-Continuous
PC
Collector Power Dissipation @TC= 25℃
TJ Junction Temperature
Tstg Storage Temperature Range
3V
35 mA
0.
35 W
150 ℃
-55~150
℃
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