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MMBR920L

Inchange Semiconductor
Part Number MMBR920L
Manufacturer Inchange Semiconductor
Description Silicon NPN RF Transistor
Published Aug 10, 2016
Detailed Description INCHANGE Semiconductor isc Silicon NPN RF Transistor isc RF Product Specification MMBR920L DESCRIPTION ·Low Noise NF= ...
Datasheet PDF File MMBR920L PDF File

MMBR920L
MMBR920L

Overview
INCHANGE Semiconductor isc Silicon NPN RF Transistor isc RF Product Specification MMBR920L DESCRIPTION ·Low Noise NF= 2.
4dB TYP.
@ f= 500MHz ·High Gain Gpe= 15dB TYP.
@ f= 500MHz APPLICATIONS ·Designed for thick and thin-film circuits using surface mount components and requiring low-noise , high-gain signal amplification at frequencies to 1 GHz.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 20 V VCEO Collector-Emitter Voltage 15 V VEBO Emitter-Base Voltage IC Collector Current-Continuous PC Collector Power Dissipation @TC= 25℃ TJ Junction Temperature Tstg Storage Temperature Range 3V 35 mA 0.
35 W 150 ℃ -55~150 ℃ isc website：...


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