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HVV1012-250 High Voltage, High Ruggedness
TM L-Band Avionics Pulsed Power
Transistor 1025-1150 MHz, 10μs Pulse, 1% Duty Cycle For Airborne DME, TCAS and IFF Applications
Features
• Silicon MOSFET Technology • Operation from 24V to 50V • High Power Gain • Extreme Ruggedness • Internal Input and Output Matching • Excellent Thermal Stability • All Gold Bonding Scheme
TYPICAL PERFORMANCE
High voltage vertical technology is well suited for high power pulsed applications in the L-Band including Airborne DME, IFF, TCAS and Mode-S applications.
MODE
FREQUENCY (MHz)
VDD (V)
IDQ Power GAIN EFFICIENCY IRL
(mA) (W) (dB)
(%) (dB)
Class AB
1150
50 100 250 1...