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HVV1012-250

HVVi
Part Number HVV1012-250
Manufacturer HVVi
Description Power Transistor
Published Aug 11, 2016
Detailed Description The innovative Semiconductor Company! HVV1012-250 High Voltage, High Ruggedness TM L-Band Avionics Pulsed Power Transist...
Datasheet PDF File HVV1012-250 PDF File

HVV1012-250
HVV1012-250

Overview
The innovative Semiconductor Company! HVV1012-250 High Voltage, High Ruggedness TM L-Band Avionics Pulsed Power Transistor 1025-1150 MHz, 10μs Pulse, 1% Duty Cycle For Airborne DME, TCAS and IFF Applications Features • Silicon MOSFET Technology • Operation from 24V to 50V • High Power Gain • Extreme Ruggedness • Internal Input and Output Matching • Excellent Thermal Stability • All Gold Bonding Scheme TYPICAL PERFORMANCE High voltage vertical technology is well suited for high power pulsed applications in the L-Band including Airborne DME, IFF, TCAS and Mode-S applications.
MODE FREQUENCY (MHz) VDD (V) IDQ Power GAIN EFFICIENCY IRL (mA) (W) (dB) (%) (dB) Class AB 1150 50 100 250 19.
5 48 20:1 Table 1: Typical RF Performance in broadband text fixture at 25°C temperature with RF pulse conditions of pulse width = 10μs and pulse period = 1ms.
DESCRIPTION The high power HVV1012-250 device is an enhancement mode RF MOSFET power transistor designed for pulsed applications in the L-Band from 1025MHz to 1150MHz.
The high voltage HVVFET™ technology produces over 250W of pulsed output power while offering high gain,high efficiency,and ease of matching with a 50 V supply.
The vertical device structure assures high reliability and ruggedness as the device is specified to withstand a 20:1 VSWR at all phase angles under full rated output power.
ORDERING INFORMATION Device Part Number: HVV1012-250 Demo Kit Part Number: HVV1012-250-EK Available through Richardson Electronics (http://rfwireless.
rell.
com/) HVVi Semiconductors, Inc.
10235 S.
51st St.
Suite 100 Phoenix, AZ.
85044 ISO 9001:2000 Certified Tel: (866) 429-HVVi (4884) or visit www.
hvvi.
com © 2008 HVVi Semiconductors, Inc.
All Rights Reserved.
EG-01-DS09A 12/11/08 1 The innovative Semiconductor Company! ThTehieninnonvoavtiatvieveSeSemimciocnodnudcutcotrorCoCompmapnayn!y! HL1F HL1F0-oV0-Bo2VrB2raV5AaV5n-A1n-1id11ri0d1r0b11Ab51oA52o0v2r0v-irn-2oiMn2oMe5ne5nH0iDH0ciDzcsHMz,sHM,P1iEP1giE0ug,0uhµl,hTµslTTMssV...


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