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Part Number
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DMT8012LSS |
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Manufacturer
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Diodes |
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Description
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N-CHANNEL MOSFET |
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Published
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Aug 20, 2016 |
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Detailed Description
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DMT8012LSS
80V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BVDSS 80V
RDS(ON) Max 16.5mΩ @ VGS = 10V 20mΩ @ VGS ...
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Datasheet
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DMT8012LSS
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Overview
DMT8012LSS
80V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BVDSS 80V
RDS(ON) Max 16.
5mΩ @ VGS = 10V 20mΩ @ VGS = 4.
5V
ID Max TA = +25°C
9.
7A
8.
8A
Features and Benefits
100% Unclamped Inductive Switch (UIS) Test in Production High Conversion Efficiency Low RDS(ON) – Minimizes On-State Losses Low Input Capacitance Fast Switching Speed Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free.
“Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability
Description and Applications
This new generation N-Channel Enhancement Mode MOSFET is designed to minimize RDS(ON), yet maintain superior switching performance.
This device is id...
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