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DMT8012LSS

Diodes
Part Number DMT8012LSS
Manufacturer Diodes
Description N-CHANNEL MOSFET
Published Aug 20, 2016
Detailed Description DMT8012LSS 80V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 80V RDS(ON) Max 16.5mΩ @ VGS = 10V 20mΩ @ VGS ...
Datasheet PDF File DMT8012LSS PDF File

DMT8012LSS
DMT8012LSS

Overview
DMT8012LSS 80V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 80V RDS(ON) Max 16.
5mΩ @ VGS = 10V 20mΩ @ VGS = 4.
5V ID Max TA = +25°C 9.
7A 8.
8A Features and Benefits  100% Unclamped Inductive Switch (UIS) Test in Production  High Conversion Efficiency  Low RDS(ON) – Minimizes On-State Losses  Low Input Capacitance  Fast Switching Speed  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free.
“Green” Device (Note 3)  Qualified to AEC-Q101 Standards for High Reliability Description and Applications This new generation N-Channel Enhancement Mode MOSFET is designed to minimize RDS(ON), yet maintain superior switching performance.
This device is ideal for use in:  Notebook Battery Power Management  Loadswitches  Backlighting  Power Management Functions  DC-DC Converters Mechanical Data  Case: SO-8  Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0  Moisture Sensitivity: Level 1 per J...


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