Shenzhen Tuofeng Semiconductor Technology Co.
, Ltd SOT-23 Plastic-Encapsulate
Transistors
MMBT3906LT1
TRANSISTOR (
PNP)
FEATURES
·As complementary type, the
NPN transistor
MMBT3904LT1 is Recommended
·Epitaxial planar die construction
MARKING: 2A
MAXIMUM RATINGS* TA=25℃ unless otherwise noted
Symbol
Parameter
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC Collector Current -Continuous
PC Collector Dissipation
TJ, Tstg
Junction and Storage Temperature
Value -40 -40 -5 -0.
2 0.
3
-55-150
Units V V V A W ℃
ELECTRICAL CHARACTERISTICS(Tamb=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
MIN
Collector-base breakdown vol...