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MMBT3906LT1

Part Number	MMBT3906LT1
Manufacturer	Tuofeng Semiconductor
Description	PNP Transistor
Published	Aug 25, 2016
Detailed Description	Shenzhen Tuofeng Semiconductor Technology Co., Ltd SOT-23 Plastic-Encapsulate Transistors MMBT3906LT1 TRANSISTOR ( PNP)...
Datasheet	MMBT3906LT1 PDF File

Overview

Shenzhen Tuofeng Semiconductor Technology Co.
, Ltd SOT-23 Plastic-Encapsulate Transistors MMBT3906LT1 TRANSISTOR ( PNP) FEATURES ·As complementary type, the NPN transistor MMBT3904LT1 is Recommended ·Epitaxial planar die construction MARKING: 2A MAXIMUM RATINGS* TA=25℃ unless otherwise noted Symbol Parameter VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current -Continuous PC Collector Dissipation TJ, Tstg Junction and Storage Temperature Value -40 -40 -5 -0.
2 0.
3 -55-150 Units V V V A W ℃ ELECTRICAL CHARACTERISTICS(Tamb=25℃ unless otherwise specified) Parameter Symbol Test conditions MIN Collector-base breakdown vol...

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