Shenzhen Tuofeng Semiconductor Technology Co.
, Ltd
4402
4402 N-Channel Enhancement Mode Field Effect
Transistor
General Description
The AO4402 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.
5V.
This device is suitable for use as a load switch or in PWM applications.
Features
VDS (V) = 30V ID = 12A RDS(ON) 14mΩ (VGS = 10V) RDS(ON) 16mΩ (VGS = 4.
5V) RDS(ON) 22mΩ (VGS = 2.
5V)
SD SD SD GD
SOIC-8
D
G S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TA=25°C
Current A
TA=70°C
Pulsed Drain Current B
ID IDM
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