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4401

Tuofeng Semiconductor
Part Number 4401
Manufacturer Tuofeng Semiconductor
Description P-Channel MOSFET
Published Aug 28, 2016
Detailed Description Shenzhen Tuofeng Semiconductor Technology Co., Ltd 4401 4401 P-Channel Enhancement Mode Field Effect Transistor Genera...
Datasheet PDF File 4401 PDF File

4401
4401

Overview
Shenzhen Tuofeng Semiconductor Technology Co.
, Ltd 4401 4401 P-Channel Enhancement Mode Field Effect Transistor General Description The AO4401 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.
5V.
This device is suitable for use as a load switch or in PWM applications.
Features VDS (V) = -30V ID = -6.
1 A RDS(ON) < 46mΩ (VGS = -10V) RDS(ON) < 61mΩ (VGS = -4.
5V) RDS(ON) < 117mΩ (VGS = -2.
5V) SOIC-8 Top View SD SD SD GD D G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TA=25°C Current A TA=70°C Pulsed Drain Current B ID IDM TA=25°C Power Dissipation A TA=70°C Junction and Storage Temperature Range PD TJ, TSTG Maximum -30 ±12 -6.
1 -5.
1 -60 3 2.
1 -55 to 150 Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C t ≤ 10s Steady-State Steady-State Symbol RθJA RθJL Typ 31 59 16 Max 40 75 24 Units V V A W °C Units °C/W °C/W °C/W Shenzhen Tuofeng Semiconductor Technology Co.
, Ltd 4401 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions STATIC PARAMETERS BVDSS IDSS IGSS VGS(th) ID(ON) RDS(ON) gFS VSD IS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current ID=-250µA, VGS=0V VDS=-24V, VGS=0V Gate-Body leakage current Gate Threshold Voltage On state drain current VDS=0V, VGS=±12V VDS=VGS ID=-250µA VGS=-4.
5V, VDS=-5V VGS=-10V, ID=-6.
1A Static Drain-Source On-Resistance VGS=-4.
5V, ID=-5A VGS=-2.
5V, ID=-1A Forward Transconductance VDS=-5V, ID=-5A Diode Forward Voltage IS=-1A,VGS=0V Maximum Body-Diode Continuous Current TJ=55°C TJ=125°C DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=-15V, f=1MHz VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Qg Qgs Qgd tD(on) tr tD(off) tf trr Qr...


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