Part Number
|
XP151A13A0MR |
Manufacturer
|
Tuofeng Semiconductor |
Description
|
Power MOS FET |
Published
|
Aug 28, 2016 |
Detailed Description
|
Shenzhen Tuofeng Semiconductor Technology Co., Ltd
N-Channel Power MOS FET DMOS Structure
Low On-State Resistance : 0.1...
|
Datasheet
|
XP151A13A0MR
|
Overview
Shenzhen Tuofeng Semiconductor Technology Co.
, Ltd
N-Channel Power MOS FET DMOS Structure
Low On-State Resistance : 0.
1Ω (max)
Ultra High-Speed Switching Gate Protect Diode Built-in SOT - 23 Package
Applications Notebook PCs Cellular and portable phones On - board power supplies Li - ion battery systems
General Description
The XP151A13A0MR is a N-Channel Power MOS FET with low on state resistance and ultra high-speed switching characteristics.
Because high-speed switching is possible, the IC can be efficiently set thereby saving energy.
In order to counter static, a gate protect diode is built-in.
The small SOT-23 package makes high density mounting possible.
Features
Low on-state resist...
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