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XP151A13A0MR

Tuofeng Semiconductor
Part Number XP151A13A0MR
Manufacturer Tuofeng Semiconductor
Description Power MOS FET
Published Aug 28, 2016
Detailed Description Shenzhen Tuofeng Semiconductor Technology Co., Ltd N-Channel Power MOS FET DMOS Structure Low On-State Resistance : 0.1...
Datasheet PDF File XP151A13A0MR PDF File

XP151A13A0MR
XP151A13A0MR

Overview
Shenzhen Tuofeng Semiconductor Technology Co.
, Ltd N-Channel Power MOS FET DMOS Structure Low On-State Resistance : 0.
1Ω (max) Ultra High-Speed Switching Gate Protect Diode Built-in SOT - 23 Package Applications Notebook PCs Cellular and portable phones On - board power supplies Li - ion battery systems General Description The XP151A13A0MR is a N-Channel Power MOS FET with low on state resistance and ultra high-speed switching characteristics.
Because high-speed switching is possible, the IC can be efficiently set thereby saving energy.
In order to counter static, a gate protect diode is built-in.
The small SOT-23 package makes high density mounting possible.
Features Low on-state resist...


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