Part Number
|
MTE05N10E3 |
Manufacturer
|
Cystech Electonics |
Description
|
N-Channel Enhancement Mode Power MOSFET |
Published
|
Aug 30, 2016 |
Detailed Description
|
CYStech Electronics Corp.
Spec. No. : C928E3 Issued Date : 2013.11.04 Revised Date : 2013.11.12 Page No. : 1/8
N-Chann...
|
Datasheet
|
MTE05N10E3
|
Overview
CYStech Electronics Corp.
Spec.
No.
: C928E3 Issued Date : 2013.
11.
04 Revised Date : 2013.
11.
12 Page No.
: 1/8
N-Channel Enhancement Mode Power MOSFET
MTE05N10E3 BVDSS ID
RDSON(TYP) @ VGS=10V, ID=20A
RDSON(TYP) @ VGS=7V, ID=20A
100V 140A 5.
9mΩ 6.
2mΩ
Features
• Low Gate Charge • Simple Drive Requirement • Repetitive Avalanche Rated • Fast Switching Characteristic • RoHS compliant package
Symbol
MTE05N10E3
Outline
TO-220
G:Gate D:Drain S:Source
GDS
Ordering Information
Device MTE05N10E3-0-UB-S
Package
TO-220 (Pb-free lead plating package)
Shipping 50 pcs/tube, 20 tubes/box, 4 boxes / carton
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green ...
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