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MTE05N10E3

Cystech Electonics
Part Number MTE05N10E3
Manufacturer Cystech Electonics
Description N-Channel Enhancement Mode Power MOSFET
Published Aug 30, 2016
Detailed Description CYStech Electronics Corp. Spec. No. : C928E3 Issued Date : 2013.11.04 Revised Date : 2013.11.12 Page No. : 1/8 N-Chann...
Datasheet PDF File MTE05N10E3 PDF File

MTE05N10E3
MTE05N10E3

Overview
CYStech Electronics Corp.
Spec.
No.
: C928E3 Issued Date : 2013.
11.
04 Revised Date : 2013.
11.
12 Page No.
: 1/8 N-Channel Enhancement Mode Power MOSFET MTE05N10E3 BVDSS ID RDSON(TYP) @ VGS=10V, ID=20A RDSON(TYP) @ VGS=7V, ID=20A 100V 140A 5.
9mΩ 6.
2mΩ Features • Low Gate Charge • Simple Drive Requirement • Repetitive Avalanche Rated • Fast Switching Characteristic • RoHS compliant package Symbol MTE05N10E3 Outline TO-220 G：Gate D：Drain S：Source GDS Ordering Information Device MTE05N10E3-0-UB-S Package TO-220 (Pb-free lead plating package) Shipping 50 pcs/tube, 20 tubes/box, 4 boxes / carton Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green ...


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