| Part Number | MTB080P06N6 |
| Manufacturer | Cystech Electonics |
| Title | P-Channel Enhancement Mode Power MOSFET |
| Description | CYStech Electronics Corp. Spec. No. : C069N6 Issued Date : 2016.03.24 Revised Date : 2016.04.15 Page No. : 1/9 P-Channel Enhancement Mode Power ... |
| Features |
• Simple drive requirement • Low on-resistance • Small package outline • Pb-free lead plating and halogen-free package Equivalent Circuit MTB080P06N6 G：Gate S：Source D：Drain Absolute Maximum Ratings (Ta=25°C) Drain-Source Voltage Gate-Source Voltage Parameter TC=25 °C, VGS=-10V Continuous Dra... |
| File Size | 464.75KB |
| Datasheet |
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MTB080P06N3 : CYStech Electronics Corp. Spec. No. : C069N3 Issued Date : 2016.03.24 Revised Date : Page No. : 1/ 9 P-Channel Enhancement Mode MOSFET MTB080P06N3 BVDSS ID@VGS=-10V, TA=25°C RDSON(TYP) VGS=-10V, ID=-2A VGS=-4.5V, ID=-1.7A -60V -2.5A 80mΩ 109mΩ Features •Advanced trench process technology •High density cell design for ultra low on resistance •Pb-free lead plating and halogen-free package Equivalent Circuit MTB080P06N3 Outline SOT-23 D G：Gate S：Source D：Drain GS Ordering Information Device MTB080P06N3-0-T1-G Package SOT-23 (Pb-free lead plating and halogen-free package) Shipping 3000 pcs / tape & reel Environment friendly grade : S for RoHS compliant products, G for RoHS comp.