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MTB080P06N3

Cystech Electonics
Part Number MTB080P06N3
Manufacturer Cystech Electonics
Description P-Channel Enhancement Mode Power MOSFET
Published Sep 4, 2016
Detailed Description CYStech Electronics Corp. Spec. No. : C069N3 Issued Date : 2016.03.24 Revised Date : Page No. : 1/ 9 P-Channel Enhance...
Datasheet PDF File MTB080P06N3 PDF File

MTB080P06N3
MTB080P06N3

Overview
CYStech Electronics Corp.
Spec.
No.
: C069N3 Issued Date : 2016.
03.
24 Revised Date : Page No.
: 1/ 9 P-Channel Enhancement Mode MOSFET MTB080P06N3 BVDSS ID@VGS=-10V, TA=25°C RDSON(TYP) VGS=-10V, ID=-2A VGS=-4.
5V, ID=-1.
7A -60V -2.
5A 80mΩ 109mΩ Features •Advanced trench process technology •High density cell design for ultra low on resistance •Pb-free lead plating and halogen-free package Equivalent Circuit MTB080P06N3 Outline SOT-23 D G：Gate S：Source D：Drain GS Ordering Information Device MTB080P06N3-0-T1-G Package SOT-23 (Pb-free lead plating and halogen-free package) Shipping 3000 pcs / tape & reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T1 : 3000 pcs / tape & reel,7” reel Product rank, zero for no rank products Product name MTB080P06N3 CYStek Product Specification CYStech Electronics Corp.
Absolute Maximum Ratings (Ta=25°C) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ VGS=-10V Pulsed Drain Current TA=25°C TA=70°C (Note 1&2) Maximum Power Dissipation TA=25°C TA=70°C Operating Junction and Storage Temperature Symbol VDS VGS ID IDM PD Tj, Tstg Spec.
No.
: C069N3 Issued Date : 2016.
03.
24 Revised Date : Page No.
: 2/ 9 Limits -60 ±20 -2.
5 (Note 3) -2 (Note 3) -10 1.
25 0.
8 -55~+150 Unit V A W °C Thermal Performance Parameter Symbol Limit Unit Thermal Resistance, Junction-to-Ambient , max (Note 3) Thermal Resistance, Junction-to-Case , max RθJA RθJC 100 50 °C/W Note : 1.
Pulse width limited by maximum junction temperature.
2.
Pulse width≤300μs, duty cycle≤2% 3.
Surface mounted on 1 in² copper pad of FR-4 board, t≤5s; 120°C/W at steady state; 417°C/W when mounted on minimum copper pad.
Electrical Characteristics (Tj=25°C, unless otherwise specified) Symbol Min.
Typ.
Max.
Unit Test Conditions Static BVDSS VGS(th) IGSS IDSS *RDS(ON) *GFS -60 -1.
0 - - -2.
5 V VGS=0V, ID=-250µA VDS=VGS, ID=-250µA - ±100 ...


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