DATA SHEET
PNP SILICON EPITAXIAL
TRANSISTOR
2SB1572
PNP SILICON EPITAXIAL
TRANSISTOR
FEATURES • Low VCE(sat): VCE(sat)1 ≤ −0.
4 V • Complementary to 2SD2403
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Collector to Base Voltage
VCBO
−80
Collector to Emitter Voltage
VCEO
−60
Emitter to Base Voltage
VEBO
−6.
0
Collector Current (DC) Collector Current (pulse) Note1
IC(DC) IC(pulse)
−3.
0 −5.
0
Base Current (DC) Base Current (pulse) Note1
Total Power Dissipation Note2
IB(DC) IB(pulse)
PT
−0.
2 −0.
4 2.
0
Junction Temperature
Tj 150
Storage Temperature Range
Tstg –55 to + 150
Notes 1.
PW ≤ 10 ms, Duty Cycle ≤ 50% 2.
When mounted on ceramic substrate of 16 cm2 x 0.
7 mm
V V V A A A A W °C °...