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B1503

Panasonic Semiconductor
Part Number B1503
Manufacturer Panasonic Semiconductor
Description 2SB1503
Published Jan 6, 2015
Detailed Description Power Transistors 2SB1503 Silicon PNP epitaxial planar type Darlington For power amplification Complementary to 2SD2276...
Datasheet PDF File B1503 PDF File

B1503
B1503

Overview
Power Transistors 2SB1503 Silicon PNP epitaxial planar type Darlington For power amplification Complementary to 2SD2276 20.
0±0.
5 Unit: mm φ 3.
3±0.
2 5.
0±0.
3 3.
0 2.
0 4.
0 2.
0 3.
0 10.
0 6.
0 s Features q Optimum for 110W HiFi output q High foward current transfer ratio hFE: 5000 to 30000 q Low collector to emitter saturation voltage VCE(sat): < –2.
5V s Absolute Maximum Ratings (TC=25˚C) Parameter Symbol Ratings Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C VCBO VCEO VEBO ICP IC PC –160 –140 –5 –12 –7 120 3.
5 Junction temperature Storage temperature Tj 150 Tstg –55 to +150 Unit V V V A A W ˚C ˚C 26.
0±0.
5 1.
5 1.
5 20.
0±0.
5 2.
5 Solder Dip 2.
0±0.
3 3.
0±0.
3 1.
0±0.
2 1.
5 2.
7±0.
3 0.
6±0.
2 5.
45±0.
3 10.
9±0.
5 123 1:Base 2:Collector 3:Emitter TOP–3L Package Internal Connection C B s Electrical Characteristics (TC=25˚C) Parameter Symbol Conditions Coll...


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