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Part Number
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NE662M16-A |
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Manufacturer
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CEL |
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Title
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NPN SILICON RF TRANSISTOR |
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Description
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DISCONTINUED
NPN SILICON RF TRANSISTOR
NE662M16 / 2SC5704
NPN SILICON RF TRANSISTOR FOR LOW NOISE ...
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Features
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• Ideal for low noise high-gain amplification and oscillation at 3 GHz or over
NF = 1.1 dB TYP. @ VCE = 2 V, IC = 5 mA...
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Published
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Sep 17, 2016 |
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Datasheet
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NE662M16-A PDF File
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Features
• Ideal for low noise high-gain amplification and oscillation at 3 GHz or over
NF = 1.1 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 2 GHz
• High fT: fT = 25.0 GHz TYP. @ VCE = 3 V, IC = 30 mA, f = 2 GHz
• 6-pin lead-less minimold package
ORDERING INFORMAT...
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