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NE662M16-T3-A

CEL
Part Number NE662M16-T3-A
Manufacturer CEL
Description NPN SILICON RF TRANSISTOR
Published Sep 17, 2016
Detailed Description DISCONTINUED NPN SILICON RF TRANSISTOR NE662M16 / 2SC5704 NPN SILICON RF TRANSISTOR FOR LOW NOISE  HIGH-GAIN AMPLIFICA...
Datasheet PDF File NE662M16-T3-A PDF File

NE662M16-T3-A
NE662M16-T3-A

Overview
DISCONTINUED NPN SILICON RF TRANSISTOR NE662M16 / 2SC5704 NPN SILICON RF TRANSISTOR FOR LOW NOISE  HIGH-GAIN AMPLIFICATION 6-PIN LEAD-LESS MINIMOLD FEATURES • Ideal for low noise  high-gain amplification and oscillation at 3 GHz or over NF = 1.
1 dB TYP.
@ VCE = 2 V, IC = 5 mA, f = 2 GHz • High fT: fT = 25.
0 GHz TYP.
@ VCE = 3 V, IC = 30 mA, f = 2 GHz • 6-pin lead-less minimold package ORDERING INFORMATION Part Number NE662M16-A 2SC5704-A NE662M16-T3-A 2SC5704-T3-A Quantity 50 pcs (Non reel) 10 kpcs/reel Supplying Form • 8 mm wide embossed taping • Pin 1 (Collector), Pin 6 (Emitter) face the perforation side of the tape Remark To order evaluation samples, please contact your nearby s...


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