Part Number
|
SSF4607D |
Manufacturer
|
Silikron Semiconductor |
Description
|
MOSFET |
Published
|
Sep 22, 2016 |
Detailed Description
|
Main Product Characteristics:
VDSS RDS(on)
-30V 19mΩ(typ.)
ID -25A ①
TO-252
Features and Benefits:
Advanced trenc...
|
Datasheet
|
SSF4607D
|
Overview
Main Product Characteristics:
VDSS RDS(on)
-30V 19mΩ(typ.
)
ID -25A ①
TO-252
Features and Benefits:
Advanced trench MOSFET process technology Special designed for PWM, load switching and
general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 150℃ operating temperature
SSF4607D
D G
Marking and pin Assignment
S Schematic diagram
Description:
It utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating.
These features combine to make this design an extremely efficient and reliable device for use in power switching application ...
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