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SSF4604

Silikron Semiconductor
Part Number SSF4604
Manufacturer Silikron Semiconductor
Description MOSFET
Published Sep 22, 2016
Detailed Description SSF4604 DESCRIPTION The SSF4604 uses advanced trench technology MOSFET to provide excellent RDS(ON) and low gate charge...
Datasheet PDF File SSF4604 PDF File

SSF4604
SSF4604

Overview
SSF4604 DESCRIPTION The SSF4604 uses advanced trench technology MOSFET to provide excellent RDS(ON) and low gate charge.
The complementary MOSFET may be used in power inverters, and other applications.
GENERAL FEATURES ●N-Channel VDS = 30V,ID = 6.
9A RDS(ON) < 44mΩ @ VGS=4.
5V RDS(ON) < 28mΩ @ VGS=10V ●P-Channel VDS = -30V,ID = -5A RDS(ON) < 87mΩ @ VGS=-4.
5V RDS(ON) < 52mΩ @ VGS=-10V ●High Power and current handing capability ●Lead free product is acquired ●Surface Mount Package N-channel P-channel Schematic diagram D1 D1 D2 D2 8 7 65 4604 1 2 34 S1 G1 S2 G2 Marking and pin Assignment SOP-8 top view PACKAGE MARKING AND ORDERING INFORMATION Device Marking Device Device Package Reel Size 4604 SSF4604 SOP-8 Ø330mm Tape width 12mm Quantity 3000 units ABSOLUTE MAXIMUM RATINGS(TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current TA=25℃ TA=70℃ VDS VGS ID Pulsed Drain Current (Note 1) Maximum Power Dissipation TA=25℃ TA=70℃ Operating Junction and Storage Temperature Range IDM PD TJ,TSTG N-Channel 30 ±20 6.
9 6.
0 30 2.
0 1.
35 -55 To 150 P-Channel -30 ±20 -5 -4.
0 -20 2.
0 1.
44 -55 To 150 THERMAL CHARACTERISTICS Thermal Resistance,Junction-to-Ambient (Note2) RθJA N-Ch P-Ch 62.
5 62.
5 Unit V V A A W ℃ ℃/W ELECTRICAL CHARACTERISTICS (TA=25℃unless otherwise noted) Parameter Symbol Condition OFF CHARACTERISTICS Min Typ Max Unit ©Silikron Semiconductor CO.
,LTD.
1 http://www.
silikron.
com v1.
0 Drain-Source Breakdown Voltage BVDSS Zero Gate Voltage Drain Current IDSS VGS=0V ID=250μA VGS=0V ID=-250μA VDS=24V,VGS=0V VDS=-24V,VGS=0V Gate-Body Leakage Current IGSS VGS=±20V,VDS=0V ON CHARACTERISTICS (Note 3) Gate Threshold Voltage VGS(th) Drain-Source On-State Resistance RDS(ON) Forward Transconductance DYNAMIC PARAMETERS gFS VDS=VGS,ID=250μA VDS=VGS,ID=-250μA VGS=10V, ID=6.
9A VGS=-10V, ID=-5.
0A VGS=4.
5V, ID=5A VGS=-4.
5V, ID=-4A VDS=5V,ID=6.
9A VDS=-5V,ID=-5A Input Capacitance Clss N...


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