Part Number
|
ICE15N73 |
Manufacturer
|
Icemos |
Description
|
N-Channel MOSFET |
Published
|
Sep 24, 2016 |
Detailed Description
|
Preliminary Data Sheet
ICE15N73
ICE15N73 N-Channel
Enhancement Mode MOSFET
ID V(BR)DSS
Product Summary
TA=25oC ID=25...
|
Datasheet
|
ICE15N73
|
Overview
Preliminary Data Sheet
ICE15N73
ICE15N73 N-Channel
Enhancement Mode MOSFET
ID V(BR)DSS
Product Summary
TA=25oC ID=250uA
15A 730V
Max Min
rDS(on) VGS=10V 0.
25Ω
Typ
Features
• Low rDS(on) • Ultra Low Gate Charge
Qg VDS=480V 82nC D
Typ
• High dv/dt capability • High Unclamped Inductive Switching (UIS) capability
• High peak current capability • Increased transconductance performance
G
• Optimized design for high performance power systems
S
T0220
ICEMOS AND ITS SISTER COMPANY 3D SEMI OWN THE FUNDAMENTAL PATENTS FOR SUPERJUNCTION MOSFETS.
THE MAJORITY OF THESE PATENTS HAVE 17 to 20 YEARS OF REMAINING LIFE.
THIS PORTFOLIO HAS GRANTED PATENTS ISSUED IN
USA, CHINA, KOREA, JAPAN, TAI...
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