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ICE15N60FP

Icemos
Part Number ICE15N60FP
Manufacturer Icemos
Description N-Channel Enhancement Mode MOSFET
Published Oct 8, 2013
Detailed Description Preliminary Data Sheet ICE15N60FP ICE15N60FP N-Channel Enhancement Mode MOSFET Features • Low rDS(on) • Ultra Low Gate ...
Datasheet PDF File ICE15N60FP PDF File

ICE15N60FP
ICE15N60FP

Overview
Preliminary Data Sheet ICE15N60FP ICE15N60FP N-Channel Enhancement Mode MOSFET Features • Low rDS(on) • Ultra Low Gate Charge • High dv/dt capability • High Unclamped Inductive Switching (UIS) capability • High peak current capability • Increased transconductance performance • Optimized design for high performance power systems HALOGEN Product Summary ID V(BR)DSS rDS(on) FREE TA=25oC ID=250uA VGS=10V VDS=480V D 15A 600V 0.
23Ω 59nC Max Min Typ Typ Qg G S ICEMOS AND ITS SISTER COMPANY 3D SEMI OWN THE FUNDAMENTAL PATENTS FOR SUPERJUNCTION MOSFETS.
THE MAJORITY OF THESE PATENTS HAVE 17 to 20 YEARS OF REMAINING LIFE.
THIS PORTFOLIO HAS GRANTED PATENTS ISSUED IN USA, CHINA, KOREA, JAPAN, TAIWAN & EUROPE.
T0220 Full-PAK Isolated (T0-220) 1=Gate, 2=Drain, 3=Source Maximum ratings b Parameter , at Tj=25oC, unless otherwise specified Symbol Conditions Value Unit Continuous drain current Pulsed drain current Avalanche energy, single pulse ID ID, pulse E AS Tc=25oC Tc=25oC ID=7.
5A ...


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