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Part Number
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ICE7N60FP |
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Manufacturer
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Icemos |
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Description
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N-Channel MOSFET |
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Published
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Sep 24, 2016 |
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Detailed Description
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ICE7N60FP
ICE7N60FP N-Channel
Enhancement Mode MOSFET
Features
• Low rDS(on) • Ultra Low Gate Charge • High dv/dt capab...
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Datasheet
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ICE7N60FP
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Overview
ICE7N60FP
ICE7N60FP N-Channel
Enhancement Mode MOSFET
Features
• Low rDS(on) • Ultra Low Gate Charge • High dv/dt capability • High Unclamped Inductive Switching (UIS) capability • High peak current capability • Increased transconductance performance • Optimized design for high performance power systems
HALOGEN
FREE
ID V(BR)DSS rDS(on)
Qg
Product Summary
TA=25oC
7A
ID=250uA 600V
VGS=10V VDS=480V
0.
57Ω 23nC
D
G S
Max Min Typ Typ
ICEMOS AND ITS SISTER COMPANY 3D SEMI OWN THE FUNDAMENTAL PATENTS FOR SUPERJUNCTION MOSFETS.
THE MAJORITY OF THESE PATENTS HAVE 17 to 20 YEARS OF REMAINING LIFE.
THIS PORTFOLIO HAS GRANTED PATENTS ISSUED IN
USA, CHINA, KOREA, JAPAN, TAIWAN & EUROPE.
T022...
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