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ICE7N60

Icemos
Part Number ICE7N60
Manufacturer Icemos
Description N-Channel MOSFET
Published Sep 24, 2016
Detailed Description Preliminary Data Sheet ICE7N60 ICE7N60 N-Channel Enhancement Mode MOSFET Features • Low rDS(on) • Ultra Low Gate Charge...
Datasheet PDF File ICE7N60 PDF File

ICE7N60
ICE7N60

Overview
Preliminary Data Sheet ICE7N60 ICE7N60 N-Channel Enhancement Mode MOSFET Features • Low rDS(on) • Ultra Low Gate Charge • High dv/dt capability • High Unclamped Inductive Switching (UIS) capability • High peak current capability • Increased transconductance performance • Optimized design for high performance power systems HALOGEN FREE ID V(BR)DSS rDS(on) Qg Product Summary TA=25oC ID=250uA VGS=10V VDS=480V 7A 600V 0.
52Ω 21nC D Max Min Typ Typ G S T0220 ICEMOS AND ITS SISTER COMPANY 3D SEMI OWN THE FUNDAMENTAL PATENTS FOR SUPERJUNCTION MOSFETS.
THE MAJORITY OF THESE PATENTS HAVE 17 to 20 YEARS OF REMAINING LIFE.
THIS PORTFOLIO HAS GRANTED PATENTS ISSUED IN USA, CHINA, KOREA, JAPAN, TAIWAN & EUROPE.
Standard Metal Heatsink 1=Gate, 2=Drain, 3=Source.
Maximum ratings b , at Tj=25°C, unless otherwise specified Parameter Symbol Conditions Continuous drain current Pulsed drain current Avalanche energy, single pulse Avalanche current, repetitive MOSFET dv/dt ruggedness Gate source voltage ID ID, pulse E AS I AR dv/dt VGS Tc=25°C Tc=25°C ID=3.
5A limited by Tjmax VDS=480V, ID=7A, Tj=125°C static AC (f>1Hz) Power dissipation Operating and storage temperature Mounting torque Ptot Tj, Tstg Tc=25°C M 3 & 3.
5 screws a When mounted on 1inch square 2oz copper clad FR-4 b Preliminary Data Sheet – Specifications subject to change Value 7 21 170 3.
5 50 ±20 ±30 65 -55 to +150 60 Unit A A mJ A V/ns V W °C Ncm SP-7N60-000-3 05/15/2013 1 Preliminary Data Sheet ICE7N60 Parameter Symbol Conditions Thermal characteristics Thermal resistance, junctioncase a RthJC Thermal resistance, junctionambient a RthJA Soldering temperature, wave soldering only allowed at leads T sold leaded 1.
6mm (0.
063in.
) from case for 10 s Values Unit Min Typ Max - - 1.
9 °C/W - - 68 - - 260 °C Electrical characteristics b , at Tj=25°C, unless otherwise specified Static characteristics Drain-source breakdown voltage V(BR)DSS Gate threshold voltage VGS(th) Zero gate voltage ...


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