STN18T20
N Channel Enhancement Mode MOSFET
18.
0A
DESCRIPTION
STN18T20 is the N-Channel logic enhancement mode power field effect
transistor which is produced using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as power management and other battery powered circuits where high-side switching.
PIN CONFIGURATION TO-252
FEATURE
l 200V/12A, RDS(ON) = 170mΩ(Typ.
) @VGS = 10V
l Super high density cell design for extremely low RDS(ON)
l Exceptional on-resistance and maximum DC current capability
l TO-252 package design
PART MARKING
Y: Year Code A...