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STN18T20

Stanson Technology
Part Number STN18T20
Manufacturer Stanson Technology
Description MOSFET
Published Sep 25, 2016
Detailed Description STN18T20 N Channel Enhancement Mode MOSFET 18.0A DESCRIPTION STN18T20 is the N-Channel logic enhancement mode power fiel...
Datasheet PDF File STN18T20 PDF File

STN18T20
STN18T20

Overview
STN18T20 N Channel Enhancement Mode MOSFET 18.
0A DESCRIPTION STN18T20 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as power management and other battery powered circuits where high-side switching.
PIN CONFIGURATION TO-252 FEATURE l 200V/12A, RDS(ON) = 170mΩ(Typ.
) @VGS = 10V l Super high density cell design for extremely low RDS(ON) l Exceptional on-resistance and maximum DC current capability l TO-252 package design PART MARKING Y: Year Code A: Date Code Q: Process Code STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.
stansontech.
com Copyright © 2008, Stanson Corp.
STN18T20 2012.
V1 STN18T20 N Channel Enhancement Mode MOSFET 18.
0A ABSOULTE MAXIMUM RATINGS (Ta = 25℃ Unless otherwise noted ) Parameter Drain-Source...


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