STN1810
N Channel Enhancement Mode MOSFET
8.
0A
DESCRIPTION
STN1810 is the N-Channel logic enhancement mode power field effect
transistor which is produced using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance and provide superior switching performance.
These applications such as notebook computer power management and other battery powered circuits where high-side switching, low inline power loss and resistance to transients are melded.
PIN CONFIGURATION SOP-8
FEATURE
60V/8.
0A, RDS(ON) = 140mΩ (Typ.
) @VGS = 10V
60V/6.
5.
0A, RDS(ON) = 150mΩ @VGS = 7.
0V
Super high density cell design for extremely low RDS(ON) Exception...