STN6562
Dual N Channel Enhancement Mode MOSFET
4.
0A
DESCRIPTION
The STN6562 is the dual N-Channel enhancement mode power field effect
transistor which is produced using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application, such as cellular phone and notebook computer power management and other battery powered circuits, and low in-line power loss are needed in a very small outline surface mount package.
PIN CONFIGURATION TSOP-6
D1 S1 D2
62YW
FEATURE
◆ 30V/4.
0A, RDS(ON)=65mohm@VGS=10V ◆ 30V/2.
2A, RDS(ON)=75mohm@VGS=4.
5V ◆ 30V/1.
5A, RDS(ON)=105mohm@VGS=2.
...