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STN6562

Stanson Technology
Part Number STN6562
Manufacturer Stanson Technology
Description MOSFET
Published Sep 25, 2016
Detailed Description STN6562 Dual N Channel Enhancement Mode MOSFET 4.0A DESCRIPTION The STN6562 is the dual N-Channel enhancement mode pow...
Datasheet PDF File STN6562 PDF File

STN6562
STN6562

Overview
STN6562 Dual N Channel Enhancement Mode MOSFET 4.
0A DESCRIPTION The STN6562 is the dual N-Channel enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application, such as cellular phone and notebook computer power management and other battery powered circuits, and low in-line power loss are needed in a very small outline surface mount package.
PIN CONFIGURATION TSOP-6 D1 S1 D2 62YW FEATURE ◆ 30V/4.
0A, RDS(ON)=65mohm@VGS=10V ◆ 30V/2.
2A, RDS(ON)=75mohm@VGS=4.
5V ◆ 30V/1.
5A, RDS(ON)=105mohm@VGS=2.
5V ◆ Super high density cell design for extremely low RDS(ON) ◆ Exceptional an-resistance and maximum DC current capability ◆ TSOP-6 package design G1 S2 G2 Y: Year A: Week Code n-channel n-channel STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA http://www.
stansontech.
com STP...


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