polyfet rf devices
GX3441
General Description
Polyfet's GAN (on SiC) HEMT power
transistors contain no internal matching; making them suitable for both broadband and narrow band applications.
The use of a thermally enhanced package enables this device to have superior heat dissipation properties.
The high drain break down voltage permits this device to operate over a wide voltage range.
RF POWER GAN
TRANSISTOR
80.
0 Watts Single Ended
Package Style GX HIGH EFFICIENCY, LINEAR
HIGH GAIN, LOW NOISE ROHS COMPLIANT
Suitable for use across 1-3000Mhz
ABSOLUTE MAXIMUM RATINGS ( T = 25 oC )
Total Device Dissipation
95 Watts
Junction to Case Thermal
Resistance
o 3.
00 C/W
Maximum Junction Tempera...