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GX3441

POLYFET RF DEVICES
Part Number GX3441
Manufacturer POLYFET RF DEVICES
Description RF POWER GAN TRANSISTOR
Published Sep 28, 2016
Detailed Description polyfet rf devices GX3441 General Description Polyfet's GAN (on SiC) HEMT power transistors contain no internal matchi...
Datasheet PDF File GX3441 PDF File

GX3441
GX3441

Overview
polyfet rf devices GX3441 General Description Polyfet's GAN (on SiC) HEMT power transistors contain no internal matching; making them suitable for both broadband and narrow band applications.
The use of a thermally enhanced package enables this device to have superior heat dissipation properties.
The high drain break down voltage permits this device to operate over a wide voltage range.
RF POWER GAN TRANSISTOR 80.
0 Watts Single Ended Package Style GX HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE ROHS COMPLIANT Suitable for use across 1-3000Mhz ABSOLUTE MAXIMUM RATINGS ( T = 25 oC ) Total Device Dissipation 95 Watts Junction to Case Thermal Resistance o 3.
00 C/W Maximum Junction Tempera...


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