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Part Number
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DF2S6.8UCT |
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Manufacturer
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Toshiba Semiconductor |
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Description
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ESD Protection Diodes |
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Published
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Sep 29, 2016 |
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Detailed Description
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ESD Protection Diodes Silicon Epitaxial Planar
DF2S6.8UCT
DF2S6.8UCT
1. Applications
• ESD Protection
Note: This produ...
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Datasheet
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DF2S6.8UCT
|
Overview
ESD Protection Diodes Silicon Epitaxial Planar
DF2S6.
8UCT
DF2S6.
8UCT
1.
Applications
• ESD Protection
Note: This product is designed for protection against electrostatic discharge (ESD) and is not intended for any other purpose, including, but not limited to, voltage regulation.
2.
Packaging and Internal Circuit
1: Cathode 2: Anode
CST2
3.
Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25)
Characteristics
Symbol
Rating
Unit
Electrostatic discharge voltage (IEC61000-4-2)(Contact)
VESD
±8
kV
Junction temperature
Tj 150
Storage temperature
Tstg -55 to 150
Note:
Using continuously under heavy loads (e.
g.
the application of high temperature/current/vol...
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