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DF2S6.8UCT

Toshiba Semiconductor
Part Number DF2S6.8UCT
Manufacturer Toshiba Semiconductor
Description ESD Protection Diodes
Published Sep 29, 2016
Detailed Description ESD Protection Diodes Silicon Epitaxial Planar DF2S6.8UCT DF2S6.8UCT 1. Applications • ESD Protection Note: This produ...
Datasheet PDF File DF2S6.8UCT PDF File

DF2S6.8UCT
DF2S6.8UCT

Overview
ESD Protection Diodes Silicon Epitaxial Planar DF2S6.
8UCT DF2S6.
8UCT 1.
Applications • ESD Protection Note: This product is designed for protection against electrostatic discharge (ESD) and is not intended for any other purpose, including, but not limited to, voltage regulation.
2.
Packaging and Internal Circuit 1: Cathode 2: Anode CST2 3.
Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25) Characteristics Symbol Rating Unit Electrostatic discharge voltage (IEC61000-4-2)(Contact) VESD ±8 kV Junction temperature Tj 150  Storage temperature Tstg -55 to 150  Note: Using continuously under heavy loads (e.
g.
the application of high temperature/current/vol...


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