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CY62162G


Part Number CY62162G
Manufacturer Cypress
Title 16-Mbit (512K x 32) Static RAM
Description The CY62162G and CY62162GE devices are high performance CMOS MoBL SRAM organized as 512K words by 32-bits. Both CY62162G and CY62162GE are availab...
Features
■ Ultra-low standby power
❐ Typical standby current: 5.5 A
❐ Maximum standby current: 16 A
■ High speed: 45 ns/55 ns
■ Embedded error-correcting code (ECC) for single-bit error correction
■ Wide voltage range: 1.65 V to 2.2 V, 2.2 V to 3.6 V
■ 1.0-V data retention
■ Transistor-transistor logic (TT...

File Size 518.77KB
Datasheet CY62162G PDF File








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CY62162GE : The CY62162G and CY62162GE devices are high performance CMOS MoBL SRAM organized as 512K words by 32-bits. Both CY62162G and CY62162GE are available with dual chip enables. CY62162GE includes an error indication pin that signals the host processor in the case of a single bit error-detection and correction event. It is ideal for providing More Battery Life™ (MoBL®) in portable applications such as cellular telephones. The device also has an automatic power down feature that reduces power consumption when addresses are not toggling. Placing the device into standby mode reduces power consumption by more than 99% when deselected (CE1 HIGH or CE2 LOW or BA-D HIGH). The input and output pins (I/O.




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