Gem micro semiconductor Inc.
GV3407 P-Channel Enhancement-Mode MOSFET (-30V, -4.
3A) PRODUCT SUMMARY VDSS ID RDS(on) (m-ohm) Max -30V -4.
3A 60 @ VGS = -10 V,ID=-4.
3A 78 @ VGS = -4.
5V,ID=-3.
0A Features  Super high dense cell trench design for low RDS(on).
 Rugged and reliable.
 SOT-23-3L package  Ordering information：GV3407（Lead（Pb）-free） GV3407-G（Lead（Pb）-free and halogen-free） 3 GV3407 Pin Assignment & Symbol 3-Lead Plastic SOT-23-3L Pin 1: Gate 2: Source 3: Drain Gate 1 2 Drain Source Absolute Maximum Ratings (TA=25oC, unless otherwise noted) Symbol VDS VGS ID IDM PD Tj, Tstg RJA RJL Parameter Drain-Source Voltage Gate-Source Voltage Drain Current @TA=25oC1,6 Drain Cu...

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)