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GV3407

Gem micro
Part Number GV3407
Manufacturer Gem micro
Description P-Channel MOSFET
Published Oct 5, 2016
Detailed Description Gem micro semiconductor Inc. GV3407 P-Channel Enhancement-Mode MOSFET (-30V, -4.3A) PRODUCT SUMMARY VDSS ID RDS(on...
Datasheet PDF File GV3407 PDF File

GV3407
GV3407


Overview
Gem micro semiconductor Inc.
GV3407 P-Channel Enhancement-Mode MOSFET (-30V, -4.
3A) PRODUCT SUMMARY VDSS ID RDS(on) (m-ohm) Max -30V -4.
3A 60 @ VGS = -10 V,ID=-4.
3A 78 @ VGS = -4.
5V,ID=-3.
0A Features  Super high dense cell trench design for low RDS(on).
 Rugged and reliable.
 SOT-23-3L package  Ordering information：GV3407（Lead（Pb）-free） GV3407-G（Lead（Pb）-free and halogen-free） 3 GV3407 Pin Assignment & Symbol 3-Lead Plastic SOT-23-3L Pin 1: Gate 2: Source 3: Drain Gate 1 2 Drain Source Absolute Maximum Ratings (TA=25oC, unless otherwise noted) Symbol VDS VGS ID IDM PD Tj, Tstg RJA RJL Parameter Drain-Source Voltage Gate-Source Voltage Drain Current @TA=25oC1,6 Drain Current @TA=70oC1,6 Drain Current (Pulsed) 2 Total Power Dissipation @TA=25oC1 Total Power Dissipation @TA=70oC1 Operating Junction and Storage Temperature Range Thermal Resistance Junction to Ambient （Steady-State）1 Thermal Resistance Junction to Ambient （t≤10S）1,6 Maximum Junction-to-Lead3 Ratings -30 20 -4.
3 -3.
5 -20 1.
4 0.
9 -55 to +150 125 90 80 Units V V A A W C C/W C/W DS-GV3407-REV03-BK16 Page 1 of 4 Gem micro semiconductor Inc.
GV3407 Electrical Characteristics (TA=25C, unless otherwise noted) Symbol Characteristic Test Conditions Min.
Typ.
Max.
Unit  Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=-250uA -30 - -V IDSS Zero Gate Voltage Drain Current VDS=-30V, VGS=0V VDS=-30V, VGS=0V, TJ=55oC - - -1 uA - - -5 IGSS Gate-Body Leakage Current VGS=20V, VDS=0V - - 100 nA  On Characteristicsc VGS(th) Gate Threshold Voltage VDS=VGS, ID=-250uA -1.
0 - -2.
5 V IDS(on) On state drain current VDS=-5V, VGS=-10V -30 - - A RDS(on) Drain-Source On-State Resistance VGS=-10V, ID=-4.
3A VGS=-10V, ID=-4.
3A, TJ=125oC - - 60 - - 75 m VGS=-4.
5V, ID=-3.
0A - - 78 gfs Forward Transconductance VDS=-5V, ID=-4.
3A - 11 - S  Dynamic Characteristics d Ciss Input Capacitance Coss Output Capacitance VDS=-15V, VGS=0V, f=1MHz - 668 830 - ...


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