Part Number
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GS81313LT36GK |
Manufacturer
|
GSI Technology |
Description
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144Mb SigmaDDR-IIIe Burst of 2 ECCRAM |
Published
|
Oct 13, 2016 |
Detailed Description
|
GS81313LT18/36GK-833/714/625
260-Pin BGA Com & Ind Temp HSTL I/O
144Mb SigmaDDR-IIIe™ Burst of 2 ECCRAM™
Up to 833 MH...
|
Datasheet
|
GS81313LT36GK
|
Overview
GS81313LT18/36GK-833/714/625
260-Pin BGA Com & Ind Temp HSTL I/O
144Mb SigmaDDR-IIIe™ Burst of 2 ECCRAM™
Up to 833 MHz 1.
25V ~ 1.
3V VDD 1.
2V ~ 1.
3V VDDQ
Features
• 4Mb x 36 and 8Mb x 18 organizations available • 833 MHz maximum operating frequency • 833 MT/s peak transaction rate (in millions per second) • 60 Gb/s peak data bandwidth (in x36 devices) • Common I/O DDR Data Bus • Non-multiplexed SDR Address Bus • One operation - Read or Write - per clock cycle • Burst of 2 Read and Write operations • 3 cycle Read Latency • On-chip ECC with virtually zero SER • 1.
25V ~ 1.
3V core voltage • 1.
2V ~ 1.
3V HSTL I/O interface • Configurable ODT (on-die termination) • ZQ pin for programmable driver...
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