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GS81313LT36GK

GSI Technology
Part Number GS81313LT36GK
Manufacturer GSI Technology
Description 144Mb SigmaDDR-IIIe Burst of 2 ECCRAM
Published Oct 13, 2016
Detailed Description GS81313LT18/36GK-833/714/625 260-Pin BGA Com & Ind Temp HSTL I/O 144Mb SigmaDDR-IIIe™ Burst of 2 ECCRAM™ Up to 833 MH...
Datasheet PDF File GS81313LT36GK PDF File

GS81313LT36GK
GS81313LT36GK

Overview
GS81313LT18/36GK-833/714/625 260-Pin BGA Com & Ind Temp HSTL I/O 144Mb SigmaDDR-IIIe™ Burst of 2 ECCRAM™ Up to 833 MHz 1.
25V ~ 1.
3V VDD 1.
2V ~ 1.
3V VDDQ Features • 4Mb x 36 and 8Mb x 18 organizations available • 833 MHz maximum operating frequency • 833 MT/s peak transaction rate (in millions per second) • 60 Gb/s peak data bandwidth (in x36 devices) • Common I/O DDR Data Bus • Non-multiplexed SDR Address Bus • One operation - Read or Write - per clock cycle • Burst of 2 Read and Write operations • 3 cycle Read Latency • On-chip ECC with virtually zero SER • 1.
25V ~ 1.
3V core voltage • 1.
2V ~ 1.
3V HSTL I/O interface • Configurable ODT (on-die termination) • ZQ pin for programmable driver...


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