INCHANGE Semiconductor
isc Silicon
NPN Power
Transistor
DESCRIPTION ·Excellent Safe Operating Area ·High DC Current Gain-hFE=15(Min)@IC = 8A ·Low Saturation Voltage-
: VCE(sat)= 1.
4V(Max)@ IC = 8A ·Complement to Type 2N6609
APPLICATIONS ·Designed for high power audio ,disk head positioners and
other linear applications, which can also be used in power switching circuits such as relay or solenoid drivers, DC-DC converters or inverters.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
160 V
VCEX
Collector-Emitter Voltage
160 V
VCEO
Collector-Emitter Voltage
140 V
VEBO
Emitter-Base Voltage
7V
IC Collector Current-Continuous
16 A
ICP ...