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2N3771

INCHANGE
Part Number 2N3771
Manufacturer INCHANGE
Description NPN Transistor
Published Sep 4, 2020
Detailed Description isc Silicon NPN Power Transistor INCHANGE Semiconductor 2N3771 DESCRIPTION ·Excellent Safe Operating Area ·High DC Cur...
Datasheet PDF File 2N3771 PDF File

2N3771
2N3771

Overview
isc Silicon NPN Power Transistor INCHANGE Semiconductor 2N3771 DESCRIPTION ·Excellent Safe Operating Area ·High DC Current Gain-hFE=15(Min)@IC = 15A ·Low Saturation Voltage- : VCE(sat)= 2.
0V(Max)@ IC = 15A ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation.
APPLICATIONS ·Designed for linear amplifiers, series pass regulators, and inductive switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO VCEX VCEO Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage 50 V 50 V 40 V VEBO IC ICM Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak 5 V 30 A 30 A IB Base Current-Continuous 7.
5 A IBM Base Current-Peak 15 A PC Collector Power Dissipation @TC=25℃ 150 W TJ Junction Temperature Tstg Storage Temperature THERMAL CHARACTERISTICS SYMBOL PARAMETER 200 ℃ -65~200 ℃ MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.
17 ℃/W isc website：www.
iscsemi.
com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2N3771 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA ; IB= 0 VCEX(SUS) Collector-Emitter Sustaining Voltage IC= 200mA ; VBE(off)= 1.
5V; RBE=100Ω VCER(SUS) Collector-Emitter Sustaining Voltage IC= 200mA ; RBE= 100Ω VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 15A; IB= 1.
5A VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 30A; IB= 6A VBE(on) Base-Emitter On Voltage IC= 15A ; VCE= 4V ICEO Collector Cutoff Current ICEV Collector Cutoff Current ICBO Collector Cutoff Current VCE= 30V; IB= 0 VCE= 50V; VBE(off)= 1.
5V VCE= 30V; VBE(off)= 1.
5V,TC=150℃ VCB= 50V; IE= 0 IEBO Emitter Cutoff Current VEB= 5V; IC=0 hFE-1 DC Current Gain IC= 15A ; VCE= 4V hFE-2 DC Current Gain IC= 30A ; VCE= 4V fT Current-Gain—Bandwidth Product IC= 1A ; VCE= 4V ;ftest= 50kHz...


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