TECHNICAL DATA
PNP HIGH POWER SILICON
TRANSISTOR
Qualified per MIL-PRF-19500/461
Devices
2N6211
2N6212
2N6213
Qualified Level
JAN JANTX JANTXV
MAXIMUM RATINGS
Ratings
Symbol 2N6211 2N6212 2N6213 Unit
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Base Current
Collector Current Total Power Dissipation
@ TA = +250C (1) @ TC = +250C (2)
Operating & Storage Temperature
VCEO VCBO VEBO
IB IC
PT
Top, Tstg
225 300 350 275 350 400
6.
0 1.
0 2.
0 3.
0 35
-55 to +200
Vdc Vdc Vdc Adc Adc W W 0C
THERMAL CHARACTERISTICS
Characteristics
Symbol
Max.
Unit
Thermal Resistance Junction-to-Case
1) Derate linearly 17.
1 mW/0C for TA +250C 2) Derate linearly 200 mW/0C fo...