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2N6211

Part Number	2N6211
Manufacturer	Microsemi
Description	PNP HIGH POWER SILICON TRANSISTOR
Published	Oct 14, 2016
Detailed Description	TECHNICAL DATA PNP HIGH POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/461 Devices 2N6211 2N6212 2N6213 Quali...
Datasheet	2N6211 PDF File

Overview

TECHNICAL DATA PNP HIGH POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/461 Devices 2N6211 2N6212 2N6213 Qualified Level JAN JANTX JANTXV MAXIMUM RATINGS Ratings Symbol 2N6211 2N6212 2N6213 Unit Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current Collector Current Total Power Dissipation @ TA = +250C (1) @ TC = +250C (2) Operating & Storage Temperature VCEO VCBO VEBO IB IC PT Top, Tstg 225 300 350 275 350 400 6.
0 1.
0 2.
0 3.
0 35 -55 to +200 Vdc Vdc Vdc Adc Adc W W 0C THERMAL CHARACTERISTICS Characteristics Symbol Max.
Unit Thermal Resistance Junction-to-Case 1) Derate linearly 17.
1 mW/0C for TA > +250C 2) Derate linearly 200 mW/0C for TC > +250C RθJC 5.
0 0C/W ELECTRICAL CHARACTERISTICS (TC = 250C unless otherwise noted) Characteristics Symbol OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage IC = 200 mAdc, f = 30-60 Hz 2N6211 2N6212 V(BR)CEO 2N6213 Collector-Emitter Breakdown Voltage IC = 200 mAdc, f = 30-60...

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