MJ2501 & MJ3001
10A, 150W, 80V
Features:
• Medium-power complementary Silicon
Transistors for use as output devices in complementary general purpose amplifier applications.
• High DC Current Gain hFE = 1000 (Typical) at IC = 5.
0A.
• Monolithic construction with built Base-Emitter Shunt Resistors.
Pin 1.
Base 2.
Emitter Collector(Case)
Dimensions
A B C D E F G H I J K
Minimum
Maximum
38.
75 19.
28 7.
96 11.
18 25.
20 0.
92 1.
38 29.
90 16.
64 3.
88 10.
57
39.
96 22.
23 9.
28 12.
19 26.
67 1.
09 1.
62 30.
40 17.
30 4.
36 11.
16 Dimensions : Millimetres
PNP NPN MJ2501 MJ3001
10 Ampere Darlington Power
Transistors Complementary Silicon 80 Volts 150 Watts
TO-3
Maximum Ratings
Characteristic
Collector-Emitter V...