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MJ3000

Comset Semiconductors
Part Number MJ3000
Manufacturer Comset Semiconductors
Description (MJ3000 / MJ3001) COMPLEMENTARY POWER DARLINGTONS
Published Dec 11, 2012
Detailed Description PNP MJ3000 – MJ3001 COMPLEMENTARY POWER DARLINGTONS The MJ3000, and MJ3001 are silicon epitaxial-base PNP power transis...
Datasheet PDF File MJ3000 PDF File

MJ3000
MJ3000

Overview
PNP MJ3000 – MJ3001 COMPLEMENTARY POWER DARLINGTONS The MJ3000, and MJ3001 are silicon epitaxial-base PNP power transistors in monolithic Darlington configuration and are mounted in Jedec TO-3 metal case.
They are intented for use in power linear and switching applications.
The complementary PNP types are the MJ2500 and MJ2501 respectively Compliance to RoHS ABSOLUTE MAXIMUM RATINGS Symbol VCBO VCEO VEBO IC IB PT TJ Ts Collector-Base Voltage Collector-EmitterVoltage Emitter-Base Voltage Collector Current Base Current Power Dissipation Junction Temperature Storage Temperature Ratings IE=0 http://www.
DataSheet4U.
net/ Value MJ3000 MJ3001 MJ3000 MJ3001 MJ3000 MJ3001 MJ3000 MJ3001 MJ3000 MJ3001 MJ3000 MJ3001 MJ3000 MJ3001 60 80 60 80 5.
0 10 0.
2 150 200 -65 to +200 Unit V V V A A W °C IB=0 IC=0 @ TC < 25° THERMAL CHARACTERISTICS Symbol RthJ-C Ratings Thermal Resistance, Junction to Case Value 1.
17 Unit °C/W 29/10/2012 COMSET SEMICONDUCTORS 1|3 datasheet pdf - http://www.
DataSheet4U.
net/ PNP MJ3000 – MJ3001 ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol BVCEO Ratings Collector-Emitter Breakdown Voltage (*) Collector Cutoff Current Test Condition(s) IC=100mA IB=0 VCE=30 V IB=0 VCE=40 V IB=0 VBE=5.
0 V IC=0 VCB=60 V RBE=1.
0 kΩ VCB=80 V RBE=1.
0 kΩ VCB=60 V RBE=1.
0 kΩ TC=150°C VCB=80 V RBE=1.
0 kΩ TC=150°C IC=5.
0 A IB=20 mA IC=10 A IB=50 mA IC=5.
0 A VCE=3.
0V VCE=3.
0 V IC=5.
0 A http://www.
DataSheet4U.
net/ Min 60 80 - Typ - Max 1.
0 Unit V MJ3000 MJ3001 MJ3000 MJ3001 MJ3000 MJ3001 MJ3000 MJ3001 MJ3000 ICEO mA 1.
0 5.
0 mA 2.
0 mA IEBO Emitter Cutoff Current ICER Collector-Emitter Leakage Current MJ3001 MJ3000 MJ3001 MJ3000 MJ3001 MJ3000 MJ3001 MJ3000 MJ3001 1000 2.
0 V 4.
0 3 V - VCE(SAT) Collector-Emitter saturation Voltage (*) Base-Emitter Voltage (*) DC Current Gain (*) VBE hFE (*) Pulse Width ≈ 300 µs, Duty Cycle ∠ 2.
0% 29/10/2012 COMSET SEMICONDUCTORS 2|3 datasheet pdf - http://www.
DataSheet4U.
net/ PNP MJ3000 – MJ3001 ME...


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